Interesting Deutsche expert call on the outlook in the HBM market with former SVP at Samsung who's now running a consulting firm => market bullishness on Samsung share gains and concerns around Micron's competitiveness due its HBM4 base die are overblown:
"We recently caught up briefly with Dr Harold Lee, founder and head consultant at Itz Lee M Co, a consulting firm. Prior to this, Dr Lee was SVP at Samsung, where he was in charge of HBM, hybrid bonding, and 3D DRAM for future product development. This update follows two HBM expert calls in Dec 2024 and June 2024.
There has been much discussion of late around HBM4 at Nvidia with claims in the Korean press ( here ) that the Samsung comeback was "on" regarding major share recovery at HBM4, potentially rising to "up to 30%" in H2-26. Based on what Dr Lee has picked up from various sources, he notes that SK Hynix delivered its HBM4 samples to Nvidia in March, with completion of qualification likely next month. By contrast, Samsung delivered only a small amount of HBM4 samples in July, with major samples likely delivered in September. This puts Samsung six months behind in terms of HBM4 ramp timing versus the leader, SK Hynix, and three months behind Micron.
While Samsung has had execution and yield issues some of which will likely sustain into the HBM4/HBM4E era, Dr Lee notes that what favours Samsung's long-term share recovery is the amount of potential clean room space it can offer up to purchasers. In the near term, Samsung offers capacity growth potential via the Pyongtaek campus (P4 ramp ongoing, P5 in construction, P6) with logic conversions on top, while in the longer term, there is a new site in Yongin (6 megafabs, from 2030). By contrast, SK Hynix has its new campus in Yongin (4 megafabs), operational from May 2027, while Micron has its new fab in Idaho (output to begin in 2027), followed by a new megafab in New York (2029+).
Dr Lee believes that the discussion around Nvidia wanting >10GBps pin speed (vs 8-10GBps in the JEDEC standard) to counter AMD competition is over-blown. Samsung and Micron have said they have achieved 11Gbps, while SK Hynix has said it is already above 10GBps. In HBM4, the big change is that the number of I/Os is doubled, which drives bandwidth, while the overall bandwidth per pin is determined by two factors: circuit design in DDR5 and circuit design for the base logic die. On the base die, SK Hynix is working with TSMC (likely at 3nm finFET), while Micron said it will maintain a conventional base die at HBM4, which was perceived to be a concern. Samsung meanwhile will use its own foundry process (4nm logic). However, using a 2xnm process for the base die is 'good enough' at HBM4 in the expert's view, so this is not likely be a major driver of share shifts in his view, even though Micron is likely to move to TSMC 3nm at HBM4E.
A more important question remains progression at Samsung on 1cnm yield (one report suggests it is nearly 80% while another points to 50%, but with variability). While Micron has delivered improvements in the maturity of its packaging yield to 70% (from 30% a year ago) using its packaging method (TC-NCF), Dr Lee notes that SK Hynix likely has an equivalent yield of over 90% by contrast. As a result, even if Micron's HBM gross margin has topped 60% using TC-NCF in recent quarters, SK Hynix, in his view, is likely standing much higher using MR-MUF. In addition, SK Hynix's thermal dissipation remains an advantage. Furthermore, going into higher stacks, the gap between MR-MUF and TC-NCF is likely to widen again, while Samsung still likely has lower packaging yields than Micron.
With die stacks trending to 16-hi at HBM4E for Rubin Ultra, higher stacks remain then a key challenge for Samsung and Micron, despite TC-NCF yields improving markedly. Dr Lee notes then that ASMPT and K&S then have an opportunity to drive fluxless TCB introduction to improve the TC-NCF process at both players. This would likely mean some new toolsets being required (not upgrades), while cleaning the surface of the micro-bumps is very different. SK Hynix by contrast has more room to go with MR-MUF to scale up to 16-hi and potentially to 20-hi. As a reminder, SK Hynix only uses TCB for temporary bonding, so its usage is much lower.
As for hybrid bonding, Dr Lee remains relatively sceptical on hybrid bonding insertion for HBM until 20-hi at the earliest (HBM5). He notes using hybrid bonding is still a delicate process because of several problems that have yet to be solved, while there is a significant increase in cost of production at this point, which could lead to big challenges for the likes of Micron or Samsung if they introduce early at 16-hi (overall HBM packaging cost is ~2x in his view vs TCB)
Lastly, we discussed HBM4 share and pricing. In Dr Lee's view, IF Samsung can improve its yield to that of Micron, its HBM4 share should reach 10% by Q4-26, which is lower than the "up to 30%" claim reported above. However, on HBM3E, Dr Lee expects the impact of a 30% discount from Samsung post its recent qualification to drive HBM3 pricing down while this discount should allow Samsung to gain 10-20% share at Nvidia on HBM3E, primarily on low-to-medium- end SKUs. As for HBM4 pricing, Dr Lee notes that HBM4's premium over HBM3E should be significant given a much higher production cost. He hears that SK Hynix is pricing HBM4 at 70% higher than HBM3E, at $23-24 per GB, compared with the current price of HBM3E of below USD14 per GB (original HBM3E price was USD17 per GB). The 40% increase on HBM4 vs HBM3E at start date reflects a 30% higher die penalty (~2x conventional DRAM, going to 2.6x) with yields (higher stacks, higher I/O pads) takes up the remaining delta.
We continue to view Micron as a strong beneficiary of growth trends in HBM, even despite the multitude of bearish reports suggesting downside to market share and pricing. On HBM3E, we remain confident that Micron can maintain share in the 20- 25% range through 2026-2027, with Samsung’s incremental share likely to come at the expense of SK Hynix rather than Micron. While Samsung’s qualification on HBM3E may have some drag on HBM3E 12-hi pricing (we model a 5% decline for Micron for CY-26), we do not believe the impact to Micron will be as bad as feared, or as bad as the impact on SK Hynix. On HBM4, we are encouraged by the expert's commentary on initial pricing, with his initial +70% estimate gen-on-gen growth well above our assumptions (we model only +10% growth gen-on-gen, while some buy-siders assume pricing could be down gen/gen pending market share/supply dynamics).
For Micron, we believe earning higher market share in HBM4 will remain a challenge especially with many of Samsung’s technical issues likely in the rear-view mirror, but we believe recent fears over pin speeds are overblown, with Micron’s base die likely to be sufficient until HBM4E. In addition, on HBM4E, we also believe that the number of qualified suppliers could decline given the higher degree of customization of the base die, a potential opportunity for Micron.
While Samsung should relatively easily convert its existing front-end 1anm capacity over to 1cnm (as well as packaging lines, C1 and C2, in Cheonan) to support its HBM4 ramp, looking further out, we continue to believe that greenfield HBM spending more broadly should be a key driver of strength in WFE spending in 2027-30, which provides a strong support of WFE growth. Our Buy-rated names on the front-end that are levered to this theme include ASML (EUR 870.10 ) , Lam ($145.04 ) and ASMI(EUR 534).
As for the back-end, the commentary on the timing of hybrid bonding insertion (primarily 20-hi) is still in line with what we assume for Besi (Buy; EUR 138.50), but the potential for MR-MUF extension at SK Hynix into 20-hi remains a risk, as is slow progress on improving hybrid bonding cost and yield. On the test side, we continue to like Technoprobe (Buy; EUR 8.83) on its potential to enter the HBM4 supply chain with its vertical MEMS probe cards for singulated stack tests, and potentially later on for DRAM wafer-level tests at HBM4E/5 with the introduction of high-speed (ie known good die) tests & hybrid bonding."